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NVMFS4841N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
30
25
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 30 V
T J = 25 ° C
T J = 125 ° C
1
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
5.6
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 30 A
I D = 30 A
4.7
9.2
7.0
11.4
m W
Forward Transconductance
g FS
V DS = 15 V, I D = 15 A
16
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
1436
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1 MHz, V DS = 12 V
V GS = 4.5 V, V DS = 15 V; I D = 30 A
V GS = 10 V, V DS = 15 V,
I D = 30 A
348
177
11.5
2.0
5.0
5.1
25.4
17
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
13.5
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V, I D = 15 A,
R G = 3.0 W
66.5
15.5
7.5
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 30 A
T J = 25 ° C
T J = 125 ° C
0.9
0.8
1.2
V
Reverse Recovery Time
t RR
20.5
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 30 A
11.6
8.9
10.7
ns
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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